DETAILED NOTES ON SIC SCHOTTKY BARRIER DIODES

A schematic look at of the system is claimed in Figure 6a: as is often observed, the MOS construction is formed on The underside and sidewalls of a trench, when the Schottky Speak to is on the highest surface area. With this format, referred to as trench MOS barrier Schottky rectifier (TMBS), a lowered level of electrical discipline is accomplished